The SH68N65DM6AG from STMicroelectronics is an Automotive Qualified N-Channel Power MOSFET Module that is ideal for switching applications. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 4 V, and a drain-source on-resistance of less than 41 milli-ohms. This module has a continuous drain current of up to 64 A and a power dissipation of less than 379 W. It is based on the half-bridge topology and integrates two N-Channel Enhancement Mode power MOSFETs in a very compact and rugged package. This AQG 324-qualified MOSFET module is fabricated on a dice-on direct bond copper (DBC) substrate and includes an isolated top-side thermal pad, resulting in low thermal resistance. It offers a high design flexibility that enables multiple configurations, including phase legs, boost, and single switches through different combinations of internal power switches. This power MOSFET is available in a surface-mount package that measures 32.20 x 24.80 x 5.40 mm.