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STB18N60M2

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STB18N60M2 Image

The STB18N60M2 from STMicroelectronics is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 255 to 280 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for STB18N60M2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB18N60M2
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 21.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    255 to 280 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    21.5 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Switching applications, LLC converters, resonant converters

Technical Documents
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