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STB30N65M2AG

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The STB30N65M2AG from STMicroelectronics is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 150 to 180 Milliohm, Drain Source Breakdown Voltage 650 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for STB30N65M2AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STB30N65M2AG
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 30.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    150 to 180 Milliohm
  • Drain Source Breakdown Voltage
    650 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    30.8 nC
  • Power Dissipation
    190 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Switching applications

Technical Documents
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