1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM6J50TU

SSM6J50TU

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM6J50TU Image

The SSM6J50TU from Toshiba is a MOSFET with Continous Drain Current -2.5 A, Drain Source Resistance 49 to 205 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage -1.2 to -0.5 V. Tags: Surface Mount. More details for SSM6J50TU can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM6J50TU
  • Manufacturer
    Toshiba
  • Description
    0.5 W, -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.5 A
  • Drain Source Resistance
    49 to 205 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    -1.2 to -0.5 V
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High Current Switching Applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products