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IPB100N08S2L-07

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The IPB100N08S2L-07 from Infineon Technologies is a MOSFET with Continous Drain Current 98 to 100 A, Drain Source Resistance 4.7 to 8.7 Mohms, Drain Source Breakdown Voltage 75 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1.2 to 2 V. Tags: Through Hole. More details for IPB100N08S2L-07 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IPB100N08S2L-07
  • Manufacturer
    Infineon Technologies
  • Description
    75V-100V N-Channel Automotive MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    98 to 100 A
  • Drain Source Resistance
    4.7 to 8.7 Mohms
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1.2 to 2 V
  • Gate Charge
    182 to 246 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    PG-TO263-3-2
  • Applications
    Automotive

Technical Documents
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