1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. STMicroelectronics
  6. STB35N60DM2

STB35N60DM2

Download Datasheet Request Quote

Note : Your request will be directed to STMicroelectronics.

STB35N60DM2 Image

The STB35N60DM2 from STMicroelectronics is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 94 to 110 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage - 25 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STB35N60DM2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STB35N60DM2
  • Manufacturer
    STMicroelectronics
  • Description
    - 25 to 25 V, 54 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 A
  • Drain Source Resistance
    94 to 110 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    - 25 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    54 nC
  • Power Dissipation
    210 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    D2PAK
  • Applications
    Switching applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products