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STD155N3LH6

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STD155N3LH6 Image

The STD155N3LH6 from STMicroelectronics is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 2.4 to 4 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Through Hole. More details for STD155N3LH6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD155N3LH6
  • Manufacturer
    STMicroelectronics
  • Description
    20 V, Single, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    2.4 to 4 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    80 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Through Hole
  • Package
    DPAK
  • Applications
    Switching applications, Automative

Technical Documents
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