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STD65N55F3

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STD65N55F3 Image

The STD65N55F3 from STMicroelectronics is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 6.5 to 8.5 Milliohm, Drain Source Breakdown Voltage 55 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for STD65N55F3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STD65N55F3
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 33.5 to 45 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    6.5 to 8.5 Milliohm
  • Drain Source Breakdown Voltage
    55 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    33.5 to 45 nC
  • Power Dissipation
    110 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    DPAK
  • Applications
    Switching applications

Technical Documents
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