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STH10N80K5-2AG

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STH10N80K5-2AG Image

The STH10N80K5-2AG from STMicroelectronics is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 600 to 680 Milliohm, Drain Source Breakdown Voltage 800 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for STH10N80K5-2AG can be seen below.

Product Specifications

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Product Details

  • Part Number
    STH10N80K5-2AG
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 17.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    600 to 680 Milliohm
  • Drain Source Breakdown Voltage
    800 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    17.3 nC
  • Power Dissipation
    121 W
  • Temperature operating range
    -55 to 150 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    H2PAK-2
  • Applications
    Switching applications

Technical Documents
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