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PSMN4R2-40VSH

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PSMN4R2-40VSH Image

The PSMN4R2-40VSH from Nexperia is a MOSFET with Continous Drain Current 69.5 to 98 A, Drain Source Resistance 3.5 to 8.8 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.4 to 3.6 V. Tags: Surface Mount. More details for PSMN4R2-40VSH can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN4R2-40VSH
  • Manufacturer
    Nexperia
  • Description
    -20 to 20 V, 13 to 37 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    69.5 to 98 A
  • Drain Source Resistance
    3.5 to 8.8 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.4 to 3.6 V
  • Gate Charge
    13 to 37 nC
  • Power Dissipation
    85 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial, Aerospace
  • Package Type
    Surface Mount
  • Package
    LFPAK56D
  • Applications
    DC-to-DC systems, LED lighting

Technical Documents
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