1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. STMicroelectronics
  6. STH275N8F7-6AG

STH275N8F7-6AG

Download Datasheet Request Quote

Note : Your request will be directed to STMicroelectronics.

STH275N8F7-6AG Image

The STH275N8F7-6AG from STMicroelectronics is a MOSFET with Continous Drain Current 180 A, Drain Source Resistance 1.7 to 2.1 Milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for STH275N8F7-6AG can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STH275N8F7-6AG
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 193 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    180 A
  • Drain Source Resistance
    1.7 to 2.1 Milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    193 nC
  • Power Dissipation
    315 W
  • Temperature operating range
    -55 to 175 Degree C
  • Qualification
    AEC-Q101
  • Package Type
    Surface Mount
  • Package
    H2PAK-6
  • Applications
    Switching applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products