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Si3900DV

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Si3900DV Image

The Si3900DV from Vishay is a MOSFET with Continous Drain Current 2.4 A, Drain Source Resistance 100 to 200 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for Si3900DV can be seen below.

Product Specifications

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Product Details

  • Part Number
    Si3900DV
  • Manufacturer
    Vishay
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    2.4 A
  • Drain Source Resistance
    100 to 200 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    2.1 nC
  • Power Dissipation
    1.15 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOP-6

Technical Documents
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