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STN3P6F6

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STN3P6F6 Image

The STN3P6F6 from STMicroelectronics is a MOSFET with Continous Drain Current -3 A, Drain Source Resistance 130 to 160 Milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -4 to -2 V. Tags: Surface Mount. More details for STN3P6F6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STN3P6F6
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 6.4 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3 A
  • Drain Source Resistance
    130 to 160 Milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -4 to -2 V
  • Gate Charge
    6.4 nC
  • Power Dissipation
    2.6 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    SOT-223
  • Applications
    Switching applications

Technical Documents
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