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STP4NK60Z

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STP4NK60Z Image

The STP4NK60Z from STMicroelectronics is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1700 to 2000 Milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for STP4NK60Z can be seen below.

Product Specifications

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Product Details

  • Part Number
    STP4NK60Z
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 18.8 to 26 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1700 to 2000 Milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    18.8 to 26 nC
  • Power Dissipation
    70 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Switching applications

Technical Documents
View details on the manufacturer's website
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