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STS10P4LLF6

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STS10P4LLF6 Image

The STS10P4LLF6 from STMicroelectronics is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 12.5 to 20 Milliohm, Drain Source Breakdown Voltage -40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2.5 to -1 V. Tags: Surface Mount. More details for STS10P4LLF6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STS10P4LLF6
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 34 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 A
  • Drain Source Resistance
    12.5 to 20 Milliohm
  • Drain Source Breakdown Voltage
    -40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2.5 to -1 V
  • Gate Charge
    34 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    DC to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Switching applications

Technical Documents
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