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STS9P3LLH6

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STS9P3LLH6 Image

The STS9P3LLH6 from STMicroelectronics is a MOSFET with Continous Drain Current -9 A, Drain Source Resistance 12 to 22.5 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -2 to -1 V. Tags: Surface Mount. More details for STS9P3LLH6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    STS9P3LLH6
  • Manufacturer
    STMicroelectronics
  • Description
    -20 to 20 V, 24 nC, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -9 A
  • Drain Source Resistance
    12 to 22.5 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -2 to -1 V
  • Gate Charge
    24 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Surface Mount
  • Package
    SO-8
  • Applications
    Switching applications

Technical Documents
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