STW13NK100Z

Note : Your request will be directed to STMicroelectronics.

STW13NK100Z Image

The STW13NK100Z from STMicroelectronics is a MOSFET with Continous Drain Current 13 A, Drain Source Resistance 560 to 700 Milliohm, Drain Source Breakdown Voltage 1000 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 4.5 V. Tags: Through Hole. More details for STW13NK100Z can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    STW13NK100Z
  • Manufacturer
    STMicroelectronics
  • Description
    -30 to 30 V, 190 to 266 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13 A
  • Drain Source Resistance
    560 to 700 Milliohm
  • Drain Source Breakdown Voltage
    1000 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 4.5 V
  • Gate Charge
    190 to 266 nC
  • Power Dissipation
    350 W
  • Temperature operating range
    -55 to 150 Degree C
  • Package Type
    Through Hole
  • Package
    TO-247
  • Applications
    Switching applications

Technical Documents

Latest MOSFETs

View more products