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TSM026NA03CR

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TSM026NA03CR Image

The TSM026NA03CR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 168 A, Drain Source Resistance 1.9 to 3.3 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Surface Mount. More details for TSM026NA03CR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM026NA03CR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    30 V, 21 to 41 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    168 A
  • Drain Source Resistance
    1.9 to 3.3 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    21 to 41 nC
  • Power Dissipation
    0.5 to 125 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56
  • Applications
    DC-DC Converters, Battery Power Management, ORing FET/Load Switching

Technical Documents
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