The TSM035NB04CZ from Taiwan Semiconductor is a MOSFET with Continous Drain Current 157 A, Drain Source Resistance 2.5 to 4.6 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for TSM035NB04CZ can be seen below.