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TSM1NB60CH

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TSM1NB60CH Image

The TSM1NB60CH from Taiwan Semiconductor is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 8000 to 10000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for TSM1NB60CH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM1NB60CH
  • Manufacturer
    Taiwan Semiconductor
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1 A
  • Drain Source Resistance
    8000 to 10000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    6.1 nC
  • Power Dissipation
    39 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251 (I-PAK)
  • Applications
    Power Supply, Lighting, Charger

Technical Documents
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