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G66-3L

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The G66-3L from Goford Semiconductor is a MOSFET with Continous Drain Current -5.8 A, Drain Source Resistance 32 to 60 milliohm, Drain Source Breakdown Voltage -16 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1 to -0.45 V. Tags: Surface Mount. More details for G66-3L can be seen below.

Product Specifications

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Product Details

  • Part Number
    G66-3L
  • Manufacturer
    Goford Semiconductor
  • Description
    -16 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.8 A
  • Drain Source Resistance
    32 to 60 milliohm
  • Drain Source Breakdown Voltage
    -16 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1 to -0.45 V
  • Gate Charge
    7.8 nC
  • Power Dissipation
    1.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN
  • Applications
    PWM applications, Load switch, Power management
View details on the manufacturer's website
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