The TSM220NB06LCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 35 A, Drain Source Resistance 18 to 28 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for TSM220NB06LCR can be seen below.