TSM2303CX

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TSM2303CX Image

The TSM2303CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current -1.3 A, Drain Source Resistance 150 to 300 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for TSM2303CX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM2303CX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.3 A
  • Drain Source Resistance
    150 to 300 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    15 nC
  • Power Dissipation
    0.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Portable Devices, High Speed Switch

Technical Documents

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