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TSM2312CX

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TSM2312CX Image

The TSM2312CX from Taiwan Semiconductor is a MOSFET with Continous Drain Current 4.9 A, Drain Source Resistance 27 to 51 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.45 to 1 V. Tags: Surface Mount. More details for TSM2312CX can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM2312CX
  • Manufacturer
    Taiwan Semiconductor
  • Description
    20 V, 14 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.9 A
  • Drain Source Resistance
    27 to 51 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.45 to 1 V
  • Gate Charge
    14 nC
  • Power Dissipation
    0.75 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Load Switch, PA Switch

Technical Documents
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