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TSM2N60ECH

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TSM2N60ECH Image

The TSM2N60ECH from Taiwan Semiconductor is a MOSFET with Continous Drain Current 2 A, Drain Source Resistance 3200 to 4000 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for TSM2N60ECH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM2N60ECH
  • Manufacturer
    Taiwan Semiconductor
  • Description
    600 V, 9.5 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2 A
  • Drain Source Resistance
    3200 to 4000 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    9.5 nC
  • Power Dissipation
    52.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251 (I-PAK)

Technical Documents
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