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TSM300NB06DCR

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TSM300NB06DCR Image

The TSM300NB06DCR from Taiwan Semiconductor is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 25 to 42.3 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for TSM300NB06DCR can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM300NB06DCR
  • Manufacturer
    Taiwan Semiconductor
  • Description
    60 V, 12 to 17 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    25 to 42.3 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    12 to 17 nC
  • Power Dissipation
    0.4 to 40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PDFN56 Dual
  • Applications
    BLDC Motor Control, Battery Power Management, DC-DC Converter, Secondary Synchronous Rectification

Technical Documents
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