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TSM3481CX6

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TSM3481CX6 Image

The TSM3481CX6 from Taiwan Semiconductor is a MOSFET with Continous Drain Current -5.7 A, Drain Source Resistance 38 to 79 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to -1 V. Tags: Surface Mount. More details for TSM3481CX6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM3481CX6
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -5.7 A
  • Drain Source Resistance
    38 to 79 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to -1 V
  • Gate Charge
    18.09 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26
  • Applications
    DC-DC Conversion, Asynchronous Buck Converter

Technical Documents
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