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TSM3911DCX6

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TSM3911DCX6 Image

The TSM3911DCX6 from Taiwan Semiconductor is a MOSFET with Continous Drain Current -2.2 A, Drain Source Resistance 115 to 300 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -0.95 to -0.45 V. Tags: Surface Mount. More details for TSM3911DCX6 can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM3911DCX6
  • Manufacturer
    Taiwan Semiconductor
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -2.2 A
  • Drain Source Resistance
    115 to 300 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -0.95 to -0.45 V
  • Gate Charge
    15.23 nC
  • Power Dissipation
    1.15 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-26

Technical Documents
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