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TSM4N60ECP

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TSM4N60ECP Image

The TSM4N60ECP from Taiwan Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 2000 to 2500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for TSM4N60ECP can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM4N60ECP
  • Manufacturer
    Taiwan Semiconductor
  • Description
    600 V, 12 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    2000 to 2500 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    12 nC
  • Power Dissipation
    86.2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TO-252 (D-PAK)

Technical Documents
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