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AP15NA9R3CXT

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The AP15NA9R3CXT from Advanced Power Electronics Corp is a MOSFET with Continous Drain Current 13.4 to 96 A, Drain Source Resistance 9.3 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for AP15NA9R3CXT can be seen below.

Product Specifications

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Product Details

  • Part Number
    AP15NA9R3CXT
  • Manufacturer
    Advanced Power Electronics Corp
  • Description
    150 V, 13.4 to 96 A, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    13.4 to 96 A
  • Drain Source Resistance
    9.3 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    68 to 109 nC
  • Switching Speed
    18 to 46 ns
  • Power Dissipation
    214.2 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PMPAK-5x6
  • Note
    Input Capacitance :- 5280 pF
View details on the manufacturer's website
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