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TSM900N10CH

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TSM900N10CH Image

The TSM900N10CH from Taiwan Semiconductor is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 72 to 100 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.5 V. Tags: Through Hole. More details for TSM900N10CH can be seen below.

Product Specifications

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Product Details

  • Part Number
    TSM900N10CH
  • Manufacturer
    Taiwan Semiconductor
  • Description
    100 V, 9.3 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    15 A
  • Drain Source Resistance
    72 to 100 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.5 V
  • Gate Charge
    9.3 nC
  • Power Dissipation
    50 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-251S (I-PAK SL)
  • Applications
    Networking, Load Switching, LED Lighting Control, AC-DC Secondary Rectification

Technical Documents
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