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PSMN1R6-30MLH

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PSMN1R6-30MLH Image

The PSMN1R6-30MLH from Nexperia is a MOSFET with Continous Drain Current 116 to 160 A, Drain Source Resistance 1.6 to 4.8 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.2 to 2.2 V. Tags: Surface Mount. More details for PSMN1R6-30MLH can be seen below.

Product Specifications

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Product Details

  • Part Number
    PSMN1R6-30MLH
  • Manufacturer
    Nexperia
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    116 to 160 A
  • Drain Source Resistance
    1.6 to 4.8 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.2 to 2.2 V
  • Gate Charge
    8.9 to 68 nC
  • Power Dissipation
    106 W
  • Temperature operating range
    -55 to 175 Degree C
  • Package Type
    Surface Mount
  • Package
    LFPAK33
  • Applications
    DC switch / load switch, USB-PD and fast-charge, Battery protection, OR-ing and hot-swap, Synchronous rectifier in AC-DC and DC-DC applications, Brushed and BLDC (brushless) motor control

Technical Documents
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