XP151A11B0MR

Note : Your request will be directed to Torex Semiconductor.

The XP151A11B0MR from Torex Semiconductor is a MOSFET with Continous Drain Current 1 A, Drain Source Resistance 90 to 170 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Power Dissipation 0.5 W. Tags: Surface Mount. More details for XP151A11B0MR can be seen below.

Product Specifications

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Product Details

Part Number
XP151A11B0MR
Manufacturer
Torex Semiconductor
Description
30 V, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

1 A
Drain Source Resistance

90 to 170 milliohm
Drain Source Breakdown Voltage

30 V
Gate Source Voltage

-20 to 20 V
Power Dissipation

0.5 W
Temperature operating range

-55 to 150 Degree C
Industry

Commercial, Industrial
RoHS Compliant

Yes
Package Type

Surface Mount
Package

SOT-23
Applications

Notebook PCs, Cellular and portable phones, On-board power supplies, Li-ion battery systems