XP152A12C0MR

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XP152A12C0MR Image

The XP152A12C0MR from Torex Semiconductor is a P-Channel Power MOSFET that has been designed to support high-speed switching operations while saving energy. It has a drain-source voltage of up to -20 V, a gate-source voltage of ±12 V, and a drain-source on-resistance of 230 milli-ohms. This MOSFET has a continuous drain current of up to -0.7 A and a power dissipation of less than 0.5 W. It integrates a gate protection diode to counter static build-up. This power MOSFET is available in a surface-mount package that measures 2.8 x 2.9 x 1.3 mm and is ideal for Li-ion battery systems, on-board power supplies, notebook PCs, portable phones, and cellular applications.

Product Specifications

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Product Details

  • Part Number
    XP152A12C0MR
  • Manufacturer
    Torex Semiconductor
  • Description
    -20 V P-Channel Power MOSFET for High-Speed Switching Applications

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Dimensions
    2.8 x 2.9 x 1.3 mm
  • Number of Channels
    Single
  • Continous Drain Current
    -0.7 A
  • Drain Source Resistance
    230 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    Notebook PCs, Cellular and portable phones, On-board power supplies, Li-ion battery systems

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