XP161A1355PR-G

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The XP161A1355PR-G from Torex Semiconductor is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 37 to 150 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Power Dissipation 2 W. Tags: Surface Mount. More details for XP161A1355PR-G can be seen below.

Product Specifications

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Product Details

Part Number
XP161A1355PR-G
Manufacturer
Torex Semiconductor
Description
20 V, N-Channel Enhancement Mode MOSFET

General

Types of MOSFET

N-Channel Enhancement Mode
Transistor Polarity

N-Channel
Number of Channels

Single
Continous Drain Current

4 A
Drain Source Resistance

37 to 150 milliohm
Drain Source Breakdown Voltage

20 V
Gate Source Voltage

-8 to 8 V
Power Dissipation

2 W
Temperature operating range

-55 to 150 Degree C
Industry

Commercial, Industrial
RoHS Compliant

Yes
Package Type

Surface Mount
Package

SOT-89
Applications

Notebook PCs, Cellular and portable phones, On-board power supplies, Li-ion battery systems