The XPJ101N04N8R-G from Torex Semiconductor is an N-Channel MOSFET. It has a drain-source breakdown voltage of 100 V, a gate threshold voltage of 2.8 V, and a drain-source on-resistance of less than 4.4 milli-ohms. This MOSFET has a continuous drain current of 122 A and a gate charge of 40.5 nC. It has low reverse transfer capacitance and high-speed switching making it suitable for industrial equipment and automotive applications. This RoHS-compliant MOSFET is available in a surface-mount package that measures 6.0 x 4.9 x 1.1 mm and is ideal for general-purpose inverters, DC switching power supplies and DC motor applications.
