XPJ102N09N8R Series

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XPJ102N09N8R Series Image

The XPJ102N09N8R Series from Torex Semiconductor is a MOSFET with Continous Drain Current 37.4 to 59.2 A, Drain Source Resistance 8.4 to 14.3 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1.8 to 3.8 V. Tags: Surface Mount. More details for XPJ102N09N8R Series can be seen below.

Product Specifications

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Product Details

  • Part Number
    XPJ102N09N8R Series
  • Manufacturer
    Torex Semiconductor
  • Description
    -20 to 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    37.4 to 59.2 A
  • Drain Source Resistance
    8.4 to 14.3 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1.8 to 3.8 V
  • Gate Charge
    19 to 25 nC
  • Power Dissipation
    25 to 62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DFN5060-8L
  • Applications
    DC Motor, General-purpose inverter, DC Switching power supply

Technical Documents

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