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MG800FXF1ZMS3

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MG800FXF1ZMS3 Image

The MG800FXF1ZMS3 from Toshiba is a MOSFET with Continous Drain Current 800 A, Drain Source Resistance 2.75 ohm, Drain Source Breakdown Voltage 3300 V, Gate Source Voltage -10 to 25 V, Gate Source Threshold Voltage 4.8 V. Tags: Module. More details for MG800FXF1ZMS3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MG800FXF1ZMS3
  • Manufacturer
    Toshiba
  • Description
    Silicon Carbide N-Channel MOSFET, Silicon Carbide SBD Module

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    SiC
  • Transistor Polarity
    N-Channel
  • Continous Drain Current
    800 A
  • Drain Source Resistance
    2.75 ohm
  • Drain Source Breakdown Voltage
    3300 V
  • Gate Source Voltage
    -10 to 25 V
  • Gate Source Threshold Voltage
    4.8 V
  • Power Dissipation
    4680 W
  • Temperature operating range
    -40 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Package Type
    Module
  • Applications
    High-Power Switching, Motor Controllers (including rail traction)

Technical Documents
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