1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM3J09FU

SSM3J09FU

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM3J09FU Image

The SSM3J09FU from Toshiba is a MOSFET with Continous Drain Current -0.2 A, Drain Source Resistance 2100 to 6000 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1.8 to -1.1 V. Tags: Surface Mount. More details for SSM3J09FU can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM3J09FU
  • Manufacturer
    Toshiba
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -0.2 A
  • Drain Source Resistance
    2100 to 6000 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1.8 to -1.1 V
  • Power Dissipation
    0.15 W
  • Temperature operating range
    150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-323
  • Applications
    Management Switch High Speed Switching Applications

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products