1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM3K35CT

SSM3K35CT

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM3K35CT Image

The SSM3K35CT from Toshiba is a MOSFET with Continous Drain Current 0.18 A, Drain Source Resistance 1500 to 20000 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM3K35CT can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM3K35CT
  • Manufacturer
    Toshiba
  • Description
    0.1 W, 20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    0.18 A
  • Drain Source Resistance
    1500 to 20000 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.1 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23
  • Applications
    High-Speed Switching, Analog Switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products