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SSM6J505NU

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The SSM6J505NU from Toshiba is a MOSFET with Continous Drain Current -12 A, Drain Source Resistance 9 to 61 Milliohm, Drain Source Breakdown Voltage -12 V, Gate Source Voltage -6 to 6 V, Gate Source Threshold Voltage -1 to -0.3 V. Tags: Surface Mount. More details for SSM6J505NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J505NU
  • Manufacturer
    Toshiba
  • Description
    1 W, -12 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -12 A
  • Drain Source Resistance
    9 to 61 Milliohm
  • Drain Source Breakdown Voltage
    -12 V
  • Gate Source Voltage
    -6 to 6 V
  • Gate Source Threshold Voltage
    -1 to -0.3 V
  • Gate Charge
    37.6 nC
  • Power Dissipation
    1 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-1220
  • Applications
    Power Management Switches

Technical Documents
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