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SSM6J507NU

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The SSM6J507NU from Toshiba is a MOSFET with Continous Drain Current -10 A, Drain Source Resistance 14 to 32 Milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 20 V, Gate Source Threshold Voltage -2.2 to -1 V. Tags: Surface Mount. More details for SSM6J507NU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6J507NU
  • Manufacturer
    Toshiba
  • Description
    2.5 W, -30 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -10 A
  • Drain Source Resistance
    14 to 32 Milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 20 V
  • Gate Source Threshold Voltage
    -2.2 to -1 V
  • Gate Charge
    20.4 nC
  • Power Dissipation
    2.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-1220
  • Applications
    Power Management Switches

Technical Documents
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