1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. Toshiba
  6. SSM6K202FE

SSM6K202FE

Download Datasheet Request Quote

Note : Your request will be directed to Toshiba.

SSM6K202FE Image

The SSM6K202FE from Toshiba is a MOSFET with Continous Drain Current 2.3 A, Drain Source Resistance 66 to 145 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6K202FE can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SSM6K202FE
  • Manufacturer
    Toshiba
  • Description
    0.5 W, 30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.3 A
  • Drain Source Resistance
    66 to 145 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-563
  • Applications
    High-Speed Switching, Power Management Switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products