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SSM6K403TU

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SSM6K403TU Image

The SSM6K403TU from Toshiba is a MOSFET with Continous Drain Current 4.2 A, Drain Source Resistance 19 to 66 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for SSM6K403TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6K403TU
  • Manufacturer
    Toshiba
  • Description
    20 V, 16.8 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.2 A
  • Drain Source Resistance
    19 to 66 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    16.8 nC
  • Power Dissipation
    0.5 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    Power Management Switches, High-Speed Switching

Technical Documents
View details on the manufacturer's website
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