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SiSH112DN-T1-GE3

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The SiSH112DN-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 17.8 A, Drain Source Resistance 6 to 8.2 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 0.6 to 1.5 V. Tags: Surface Mount. More details for SiSH112DN-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiSH112DN-T1-GE3
  • Manufacturer
    Vishay
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    17.8 A
  • Drain Source Resistance
    6 to 8.2 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    0.6 to 1.5 V
  • Gate Charge
    18 to 27 nC
  • Power Dissipation
    3.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK 1212-8
  • Applications
    Synchronous rectification, Load switch

Technical Documents
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