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SSM6N36TU

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SSM6N36TU Image

The SSM6N36TU from Toshiba is a MOSFET with Continous Drain Current 0.5 A, Drain Source Resistance 460 to 1520 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -10 to 10 V, Gate Source Threshold Voltage 0.35 to 1 V. Tags: Surface Mount. More details for SSM6N36TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N36TU
  • Manufacturer
    Toshiba
  • Description
    20 V, 1.23 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.5 A
  • Drain Source Resistance
    460 to 1520 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -10 to 10 V
  • Gate Source Threshold Voltage
    0.35 to 1 V
  • Gate Charge
    1.23 nC
  • Power Dissipation
    0.5 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching Applications

Technical Documents
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