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SSM6N40TU

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SSM6N40TU Image

The SSM6N40TU from Toshiba is a MOSFET with Continous Drain Current 1.6 A, Drain Source Resistance 96 to 182 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.6 V. Tags: Surface Mount. More details for SSM6N40TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N40TU
  • Manufacturer
    Toshiba
  • Description
    30 V, 5.1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    1.6 A
  • Drain Source Resistance
    96 to 182 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.6 V
  • Gate Charge
    5.1 nC
  • Power Dissipation
    0.5 W
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    Power Management Switch Applications, High-Speed Switching Applications

Technical Documents
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