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SSM6N56FE

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SSM6N56FE Image

The SSM6N56FE from Toshiba is a MOSFET with Continous Drain Current 0.8 A, Drain Source Resistance 186 to 840 Milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6N56FE can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N56FE
  • Manufacturer
    Toshiba
  • Description
    20 V, 1 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.8 A
  • Drain Source Resistance
    186 to 840 Milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    1 nC
  • Power Dissipation
    0.25 W
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-363
  • Applications
    High-Speed Switching

Technical Documents
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