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RS1E200BN

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RS1E200BN Image

The RS1E200BN from ROHM Semiconductor is a MOSFET with Continous Drain Current -68 to 68 A, Drain Source Resistance 2.8 to 5.9 Milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for RS1E200BN can be seen below.

Product Specifications

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Product Details

  • Part Number
    RS1E200BN
  • Manufacturer
    ROHM Semiconductor
  • Description
    30 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -68 to 68 A
  • Drain Source Resistance
    2.8 to 5.9 Milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    59 nC
  • Power Dissipation
    25 W
  • Temperature operating range
    150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    HSOP8S
  • Applications
    Switching

Technical Documents
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