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SSM6N62TU

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SSM6N62TU Image

The SSM6N62TU from Toshiba is a MOSFET with Continous Drain Current 0.8 A, Drain Source Resistance 67 to 456 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for SSM6N62TU can be seen below.

Product Specifications

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Product Details

  • Part Number
    SSM6N62TU
  • Manufacturer
    Toshiba
  • Description
    20 V, 2 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    0.8 A
  • Drain Source Resistance
    67 to 456 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    2 nC
  • Power Dissipation
    0.5 W
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UF6
  • Applications
    Power Management Switches, DC-DC Converters

Technical Documents
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